Open AccessActinic microscope for extreme ultraviolet lithography photomask inspection and review
Author(s) -
Michael Goldstein,
Patrick Naulleau
Publication year - 2012
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.20.015752
Subject(s) - photomask , extreme ultraviolet lithography , extreme ultraviolet , optics , metrology , lithography , reticle , scanner , materials science , moiré pattern , computer science , optoelectronics , resist , nanotechnology , physics , laser , layer (electronics) , wafer
Two dual-configuration extreme ultraviolet (EUV, 13.5nm wavelength) optical designs are described as a means to overcome principal EUV photomask metrology challenges. Semiconductor industry-wide efforts to define performance requirements and create standalone tools that can be used to discover, review, and accurately locate phase, amplitude, and mask pattern defects are described. The reference designs co-optimize low and high magnification configurations for orthogonal chief ray planes to avoid inspection and review trade-offs and emulate the aerial image of a lithography scanner.