Open AccessNarrow-band waveguide Bragg gratings on SOI wafers with CMOS-compatible fabrication process
Author(s) -
Xu Wang,
Wei Shi,
Han Yun,
Samantha M. Grist,
Nicolas A. F. Jaeger,
Lukas Chrostowski
Publication year - 2012
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.20.015547
Subject(s) - materials science , silicon on insulator , optics , fabrication , grating , fiber bragg grating , wafer , optoelectronics , waveguide , lithography , diffraction grating , electron beam lithography , wavelength , silicon , resist , physics , medicine , alternative medicine , pathology , layer (electronics) , composite material
We demonstrate the design, fabrication and measurement of integrated Bragg gratings in a compact single-mode silicon-on-insulator ridge waveguide. The gratings are realized by corrugating the sidewalls of the waveguide, either on the ridge or on the slab. The coupling coefficient is varied by changing the corrugation width which allows precise control of the bandwidth and has a high fabrication tolerance. The grating devices are fabricated using a CMOS-compatible process with 193 nm deep ultraviolet lithography. Spectral measurements show bandwidths as narrow as 0.4 nm, which are promising for on-chip applications that require narrow bandwidths such as WDM channel filters. We also present the die-to-die nonuniformity for the grating devices on the wafer, and our analysis shows that the Bragg wavelength deviation is mainly caused by the wafer thickness variation.