Open AccessHigh indium content InGaN films grown by pulsed laser deposition using a dual-compositing target
Author(s) -
Kun-Ching Shen,
Tzu Yu Wang,
Dong Sing Wuu,
Ray–Hua Horng
Publication year - 2012
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.20.015149
Subject(s) - indium , materials science , sapphire , pulsed laser deposition , optoelectronics , compositing , deposition (geology) , nucleation , indium gallium nitride , laser , optics , thin film , nanotechnology , gallium nitride , layer (electronics) , chemistry , computer science , paleontology , physics , organic chemistry , artificial intelligence , sediment , image (mathematics) , biology
High indium compositions InGaN films were grown on sapphires using low temperature pulse laser deposition (PLD) with a dual-compositing target. This target was used to overcome the obstacle in the InGaN growth by PLD due to the difficulty of target preparation, and provided a co-deposition reaction, where InGaN grains generated from the indium and GaN vapors deposit on sapphire surface and then act as nucleation seeds to promote further InGaN growth. The effects of co-deposition on growth mechanisms, surface morphology, and electrical properties of films were thoroughly investigated and the results clearly show promise for the development of high indium InGaN films using PLD technique with dual-compositing targets.