Open AccessHighly efficient CW parametric conversion at 1550 nm in SOI waveguides by reverse biased p-i-n junction
Author(s) -
Andrzej Gajda,
Lars Zimmermann,
Mahmoud Jazayerifar,
G. Winzer,
Huiping Tian,
Robert Elschner,
Thomas Richter,
C. Schubert,
Bernd Tillack,
K. Petermann
Publication year - 2012
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.20.013100
Subject(s) - silicon on insulator , optics , materials science , energy conversion efficiency , diode , waveguide , wavelength , optoelectronics , silicon , physics
In this paper we present four-wave mixing (FWM) based parametric conversion experiments in p-i-n diode assisted silicon-on-insulator (SOI) nano-rib waveguides using continuous-wave (CW) light around 1550 nm wavelength. Using a reverse biased p-i-n waveguide diode we observe an increase of the wavelength conversion efficiency of more than 4.5 dB compared to low loss nano-rib waveguides without p-i-n junction, achieving a peak efficiency of -1 dB. Conversion efficiency improves also by more than 7 dB compared to previously reported experiments deploying 1.5 µm SOI waveguides with p-i-n structure. To the best of our knowledge, the observed peak conversion efficiency of -1dB is the highest CW efficiency in SOI reported so far.