Enhanced optical bistability from self-heating due to free carrier absorption in substrate removed silicon ring modulators | Zendy

Xuezhe Zheng | Zendy; Ying Luo | Zendy; Guoliang Li | Zendy; Ivan Shubin | Zendy; Hiren Thacker | Zendy; Jin Yao | Zendy; Kannan Raj | Zendy; J. E. Cunningham | Zendy; Ashok V. Krishnamoorthy | Zendy

Open Access

Enhanced optical bistability from self-heating due to free carrier absorption in substrate removed silicon ring modulators

Author(s) -

Xuezhe Zheng,

Ying Luo,

Guoliang Li,

Ivan Shubin,

Hiren Thacker,

Jin Yao,

Kannan Raj,

J. E. Cunningham,

Ashok V. Krishnamoorthy

Publication year - 2012

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.20.011478

Subject(s) - materials science , bistability , silicon , optical bistability , optics , optoelectronics , absorption (acoustics) , substrate (aquarium) , modulation (music) , optical switch , resonance (particle physics) , free carrier absorption , doping , nonlinear optics , physics , atomic physics , laser , oceanography , acoustics , composite material , geology

We show enhanced optical bistability induced by free carrier absorption from junction doping in substrate-removed silicon ring modulators. Such linear thermal effects dominate the loss in high-speed depletion silicon ring modulators. Optical bistability was observed with about 100 μW of input optical power. We further show that such thermal interactions causes data-dependent ring resonance shifts, and consequently severely degrade the data modulation quality at low speeds. The frequency response of this effect was measured to be about 100~200 kHz.

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