40 Gbit/s low-loss silicon optical modulator based on a pipin diode | Zendy

Mélissa Ziebell | Zendy; Delphine MarrisMorini | Zendy; G. Rasigade | Zendy; Jean-Marc Fédéli | Zendy; P. Crozat | Zendy; Éric Cassan | Zendy; David Bouville | Zendy; Laurent Vivien | Zendy

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40 Gbit/s low-loss silicon optical modulator based on a pipin diode

Author(s) -

Mélissa Ziebell,

Delphine MarrisMorini,

G. Rasigade,

Jean-Marc Fédéli,

P. Crozat,

Éric Cassan,

David Bouville,

Laurent Vivien

Publication year - 2012

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.20.010591

Subject(s) - extinction ratio , optics , materials science , insertion loss , diode , interferometry , pin diode , waveguide , optoelectronics , silicon , gigabit , wavelength , physics

40 Gbit/s low-loss silicon optical modulators are demonstrated. The devices are based on the carrier depletion effect in a pipin diode to generate a good compromise between high efficiency, speed and low optical loss. The diode is embedded in a Mach-Zehnder interferometer, and a self-aligned fabrication process was used to obtain precise localization of the active p-doped region in the middle of the waveguide. Using a 4.7 mm (resp. 0.95 mm) long phase shifter, the modulator exhibits an extinction ratio of 6.6 dB (resp. 3.2 dB), simultaneously with an optical loss of 6 dB (resp. 4.5 dB) at the same operating point.

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