Open Access13 μm InAs/GaAs quantum dot lasers on Si rib structures with current injection across direct-bonded GaAs/Si heterointerfaces
Author(s) -
Katsuaki Tanabe,
Katsuyuki Watanabe,
Yasuhiko Arakawa
Publication year - 2012
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.20.00b315
Subject(s) - materials science , optoelectronics , lasing threshold , quantum dot , laser , quantum dot laser , heterojunction , substrate (aquarium) , gallium arsenide , wafer , quantum well , silicon , wafer bonding , semiconductor laser theory , optics , semiconductor , physics , wavelength , oceanography , geology
An InAs/GaAs quantum dot laser on a Si rib structure has been demonstrated. The double heterostructure laser structure grown on a GaAs substrate is layer-transferred onto a patterned Si substrate by GaAs/Si direct wafer bonding without oxide or metal mediation. This Fabry-Perot laser operates with current injection through the GaAs/Si rib interface and exhibits InAs quantum dot ground state lasing at 1.28 μm at room temperature, with a threshold current density of 480 A cm(-2).