13 μm InAs/GaAs quantum dot lasers on Si rib structures with current injection across direct-bonded GaAs/Si heterointerfaces | Zendy

Katsuaki Tanabe | Zendy; Katsuyuki Watanabe | Zendy; Yasuhiko Arakawa | Zendy

Open Access

13 μm InAs/GaAs quantum dot lasers on Si rib structures with current injection across direct-bonded GaAs/Si heterointerfaces

Author(s) -

Katsuaki Tanabe,

Katsuyuki Watanabe,

Yasuhiko Arakawa

Publication year - 2012

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.20.00b315

Subject(s) - materials science , optoelectronics , lasing threshold , quantum dot , laser , quantum dot laser , heterojunction , substrate (aquarium) , gallium arsenide , wafer , quantum well , silicon , wafer bonding , semiconductor laser theory , optics , semiconductor , physics , wavelength , oceanography , geology

An InAs/GaAs quantum dot laser on a Si rib structure has been demonstrated. The double heterostructure laser structure grown on a GaAs substrate is layer-transferred onto a patterned Si substrate by GaAs/Si direct wafer bonding without oxide or metal mediation. This Fabry-Perot laser operates with current injection through the GaAs/Si rib interface and exhibits InAs quantum dot ground state lasing at 1.28 μm at room temperature, with a threshold current density of 480 A cm(-2).

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