Open AccessNegative thermal quenching of photoluminescence in zinc oxide nanowire-core/graphene-shell complexes
Author(s) -
Shisheng Lin,
B. G. Chen,
Wentao Xiong,
Yan Yang,
Hao He,
Junjie Luo
Publication year - 2012
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.20.00a706
Subject(s) - graphene , materials science , photoluminescence , nanowire , heterojunction , band gap , fermi level , optoelectronics , semiconductor , quenching (fluorescence) , nanotechnology , optics , physics , electron , quantum mechanics , fluorescence
Graphene is an atomic thin two-dimensional semimetal whereas ZnO is a direct wide band gap semiconductor with a strong light-emitting ability. In this paper, we report on photoluminescence (PL) of ZnO-nanowires (NWs)-core/Graphene-shell heterostructures, which shows a negative thermal quenching (NTQ) behavior both for the near band-edge and deep level emission. The abnormal PL behavior was understood through the charging and discharging processes between ZnO NWs and graphene. The NTQ properties are most possibly induced by the unique rapidly increasing density of states of graphene as a function of Fermi level, which promises a higher quantum tunneling probability between graphene and ZnO at a raised temperature.