Open AccessSolution-processed Li–Al layered-double-hydroxide platelet structures for high efficiency InGaN light emitting diodes
Author(s) -
Chia-Feng Lin,
Peng-Han Tsai,
Zhiyu Lin,
Jun-Yen Uan,
ChunMin Lin,
Chou-Chen Yang,
Bing-Cheng Shieh
Publication year - 2012
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.20.00a669
Subject(s) - passivation , materials science , hydroxide , light emitting diode , diode , optoelectronics , layer (electronics) , optics , nanotechnology , inorganic chemistry , chemistry , physics
High-oriented Li-Al layered double hydroxide (LDH) films were grown on an InGaN light-emitting diode (LED) structures by immersing in an aqueous alkaline Al(3+)- and Li+-containing solution. The stand upward and adjacent Li-Al LDH platelet structure was formed on the LED structure as a textured film to increase the light extraction efficiency. The light output power of the LED structure with the Li-Al LDH platelet structure had a 31% enhancement compared with a conventional LED structure at 20 mA. The reverse leakage currents, at -5V, were measured at -2.3 × 10(-8) A and -1.0 × 10(-10)A for the LED structures without and with the LDH film that indicated the Li-Al LDH film had the insulated property acted a passivation layer that had potential to replace the conventional SiO2 and Si3N4 passivation layers. The Li-Al LDH layer had the textured platelet structure and the insulated property covering whole the LED surface that has potential for high efficiency InGaN LED applications.