Open AccessConditions for admittance-matched tunneling through symmetric metal-dielectric stacks
Author(s) -
T. W. Allen,
R. G. DeCorby
Publication year - 2012
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.20.00a578
Subject(s) - admittance , dielectric , transmittance , optics , stack (abstract data type) , materials science , quantum tunnelling , surface plasmon , plasmon , refractive index , reflection (computer programming) , optoelectronics , physics , electrical impedance , quantum mechanics , computer science , programming language
We used the theory of potential transmittance to derive a general expression for reflection-less tunneling through a periodic stack with a dielectric-metal-dielectric unit cell. For normal-incidence from air, the theory shows that only a specific (and typically impractically large) dielectric index can enable a perfect admittance match. For off-normal incidence of TE-polarized light, an admittance match is possible at a specific angle that depends on the index of the ambient and dielectric media and the thickness and index of the metal. For TM-polarized light, admittance matching is possible within the evanescent-wave range (i.e. for tunneling mediated by surface plasmons). The results provide insight for research on transparent metals and superlenses.