Enhancement of wall-plug efficiency in vertical InGaN/GaN LEDs by improved current spreading | Zendy

Jun Ho Son | Zendy; Buem Joon Kim | Zendy; Chul Jong Ryu | Zendy; Yang Hee Song | Zendy; Hwan Keon Lee | Zendy; Joo Won Choi | Zendy; JongLam Lee | Zendy

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Enhancement of wall-plug efficiency in vertical InGaN/GaN LEDs by improved current spreading

Author(s) -

Jun Ho Son,

Buem Joon Kim,

Chul Jong Ryu,

Yang Hee Song,

Hwan Keon Lee,

Joo Won Choi,

JongLam Lee

Publication year - 2012

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.20.00a287

Subject(s) - light emitting diode , materials science , chemical vapor deposition , optoelectronics , diode , transmittance , spark plug , layer (electronics) , current (fluid) , wide bandgap semiconductor , optics , composite material , electrical engineering , physics , engineering , aerospace engineering

We present the enhancement of wall-plug efficiency in vertical InGaN/GaN light-emitting diodes (V-LEDs) by improved current spreading with a novel Al2O3 current blocking layer (CBL). The Al2O3 CBL deposited by electron-beam evaporation shows high transmittance and good corrosion resistance to acidic solutions. V-LEDs with an Al2O3 CBL show similar light output power but lower forward voltage as compared to those with a SiO2 CBL deposited by plasma-enhanced chemical vapor deposition. As a result, the wall-plug efficiency of V-LEDs with an Al2O3 CBL at 500 mA was improved by 5% as compared to those with a SiO2 CBL, and by 19% as compared to those without a CBL.

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