Open AccessLight-emitting devices with tunable color from ZnO nanorods grown on InGaN/GaN multiple quantum wells
Author(s) -
Hong-Mou Shih,
Shih-Hao Cheng,
Jyong-Kuen Lian,
TaiYuan Lin,
YangFang Chen
Publication year - 2012
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.20.00a270
Subject(s) - nanorod , materials science , optoelectronics , light emitting diode , quantum well , nanoscopic scale , optics , gallium nitride , wide bandgap semiconductor , anisotropy , semiconductor , nanotechnology , laser , physics , layer (electronics)
Based on the composite consisting of ZnO nanorods (NRs) grown on InGaN/GaN multiple quantum wells (MQWs), we have demonstrated a novel light-emitting device (LED) that has the capability to emit dual beam radiations. Interestingly, the relative intensity between the dual emissions is able to be manipulated by their polarizations. The underlying mechanism can be well understood in terms of the anisotropic optical properties arising from the geometric structures of constituent nanoscale materials. The results shown here may be extended to many other nanocomposite systems and pave a new pathway to create LEDs with tunable properties.