Open AccessMonolithic integration of a silica AWG and Ge photodiodes on Si photonic platform for one-chip WDM receiver
Author(s) -
Hidetaka Nishi,
Tai Tsuchizawa,
Rai Kou,
Hiroyuki Satō,
Takashi Yamada,
Hirokazu Kimura,
Yasuhiko Ishikawa,
Kazumi Wada,
Koji Yamada
Publication year - 2012
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.20.009312
Subject(s) - photodiode , transimpedance amplifier , arrayed waveguide grating , materials science , optoelectronics , photonics , optics , photonic integrated circuit , wavelength division multiplexing , amplifier , silicon photonics , chip , multiplexing , wavelength , operational amplifier , cmos , computer science , physics , telecommunications
On the silicon (Si) photonic platform, we monolithically integrated a silica-based arrayed-waveguide grating (AWG) and germanium (Ge) photodiodes (PDs) using low-temperature fabrication technology. We confirmed demultiplexing by the AWG, optical-electrical signal conversion by Ge PDs, and high-speed signal detection at all channels. In addition, we mounted a multichannel transimpedance amplifier/limiting amplifier (TIA/LA) circuit on the fabricated AWG-PD device using flip-chip bonding technology. The results show the promising potential of our Si photonic platform as a photonics-electronics convergence.