Monolithic integration of a silica AWG and Ge photodiodes on Si photonic platform for one-chip WDM receiver | Zendy

Hidetaka Nishi | Zendy; Tai Tsuchizawa | Zendy; Rai Kou | Zendy; Hiroyuki Shinojima | Zendy; Takashi Yamada | Zendy; Hideaki Kimura | Zendy; Yasuhiko Ishikawa | Zendy; Kazumi Wada | Zendy; Koji Yamada | Zendy

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Monolithic integration of a silica AWG and Ge photodiodes on Si photonic platform for one-chip WDM receiver

Author(s) -

Hidetaka Nishi,

Tai Tsuchizawa,

Rai Kou,

Hiroyuki Shinojima,

Takashi Yamada,

Hideaki Kimura,

Yasuhiko Ishikawa,

Kazumi Wada,

Koji Yamada

Publication year - 2012

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.20.009312

Subject(s) - photodiode , transimpedance amplifier , arrayed waveguide grating , materials science , optoelectronics , photonics , optics , photonic integrated circuit , wavelength division multiplexing , amplifier , silicon photonics , chip , multiplexing , wavelength , operational amplifier , cmos , computer science , physics , telecommunications

On the silicon (Si) photonic platform, we monolithically integrated a silica-based arrayed-waveguide grating (AWG) and germanium (Ge) photodiodes (PDs) using low-temperature fabrication technology. We confirmed demultiplexing by the AWG, optical-electrical signal conversion by Ge PDs, and high-speed signal detection at all channels. In addition, we mounted a multichannel transimpedance amplifier/limiting amplifier (TIA/LA) circuit on the fabricated AWG-PD device using flip-chip bonding technology. The results show the promising potential of our Si photonic platform as a photonics-electronics convergence.

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