Open AccessDependences of photoluminescence from P-implanted epitaxial Ge
Author(s) -
Ding Liu,
Andy Eu-Jin Lim,
Jason Tsung-Yang Liow,
Ming Yu,
GuoQiang Lo
Publication year - 2012
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.20.008228
Subject(s) - photoluminescence , materials science , dopant , epitaxy , annealing (glass) , substrate (aquarium) , optoelectronics , dopant activation , analytical chemistry (journal) , doping , layer (electronics) , nanotechnology , chemistry , composite material , oceanography , chromatography , geology
A systematic investigation has been carried out to study the influence of various annealings and implantations on the photoluminescence (PL) properties of phosphorus (P)-implanted Ge epitaxial films on Si substrate. For un-capped Ge samples, rapid thermal annealing (RTA) at 700 °C for 300 seconds yields the strongest PL emission peaked at 1550 nm. The influence of employing various capping layers (i.e., SiO(2), Si(3)N(4), and α-Si ) on the PL properties has been investigated. The capping layers are found to effectively decrease the dopant loss, leading to a significant PL enhancement. Si(3)N(4) is found to be the most efficient capping layer to prevent dopant out-diffusion and thus lead to strongest PL. Furthermore, it has been found that capping layers not only enhance the PL intensities but also make PL emission peak red- and blue- shift, depending on the stress type of the capping films. The effect of implantation dose on the PL has been also investigated.