Open AccessIndium-rich InGaN epitaxial layers grown pseudomorphically on a nano-sculpted InGaN template
Author(s) -
Junjun Xue,
D. J. Chen,
B. Liu,
Haijun Lu,
R. Zhang,
Yi Zheng,
B. Cui,
A. M. Wowchak,
A. M. Dabiran,
Ke Xu,
J. P. Zhang
Publication year - 2012
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.20.008093
Subject(s) - materials science , indium , optoelectronics , epitaxy , indium gallium nitride , dislocation , optics , nano , gallium nitride , nanotechnology , composite material , layer (electronics) , physics
Indium-rich InGaN epitaxial layers with a p-i-n structure were grown pseudomorphically on a strain-relaxed InGaN template to reduce structural strain induced by lattice mismatch. We applied a nano-sculpting process to improve the crystal quality of the strain-relaxed InGaN template. The results show that the nano-sculpting process can suppress effectively the threading dislocation generation and improves significantly the I-V characteristic of the InGaN p-i-n structure. This InGaN template technique with nano-sculpting process shows great potential for future applications in indium-rich InGaN optic-electron devices.