Open AccessOptical waveguides in TiO_2 formed by He ion implantation
Author(s) -
Zhuanfang Bi,
Lei Wang,
Xiuhong Liu,
Shaomei Zhang,
Mingming Dong,
Quanzhong Zhao,
Xianglong Wu,
KeMing Wang
Publication year - 2012
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.20.006712
Subject(s) - materials science , optics , ion implantation , ion , waveguide , planar , lithium niobate , refractive index , rutherford backscattering spectrometry , ion beam , femtosecond , optoelectronics , laser , beam (structure) , thin film , chemistry , nanotechnology , physics , computer graphics (images) , organic chemistry , computer science
We report on the formation and the optical properties of the planar and ridge optical waveguides in rutile TiO₂ crystal by He+ ion implantation combined with micro-fabrication technologies. Planar optical waveguides in TiO₂ are fabricated by high-energy (2.8 MeV) He+-ion implantation with a dose of 3 × 10¹⁶ ions/cm² and triple low energies (450, 500, 550) keV He+-ion implantation with all fluences of 2 × 10¹⁶ ions/cm² at room temperature. The guided modes were measured by a modal 2010 prism coupler at wavelength of 1539 nm. There are damage profiles in ion-implanted waveguides by Rutherford backscattering (RBS)/channeling measurements. The refractive-index profile of the 2.8 MeV He+-implanted waveguide was analyzed based on RCM (Reflected Calculation Method). Also ridge waveguides were fabricated by femtosecond laser ablation on 2.8 MeV ion implanted planar waveguide and Ar ion beam etching on the basis of triple keV ion implanted planar waveguide, separately. The loss of the ridge waveguide was estimated. The measured near-field intensity distributions of the planar and ridge modes are all shown.