Open AccessTheory and modeling of electrically tunable metamaterial devices using inter-subband transitions in semiconductor quantum wells
Author(s) -
Alon Gabbay,
Igal Brener
Publication year - 2012
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.20.006584
Subject(s) - metamaterial , semiconductor , permittivity , heterojunction , quantum well , optoelectronics , planar , photonic metamaterial , transformation optics , materials science , infrared , coupling (piping) , quantum , optics , physics , dielectric , quantum mechanics , computer science , laser , computer graphics (images) , metallurgy
In this paper, we propose a new and versatile mechanism for electrical tuning of planar metamaterials: strong coupling of metamaterial resonances to engineered intersubband transitions that can be tuned through the application of an electrical bias. We present the general formalism that allows calculating the permittivity tensor for intersubband transitions in generic semiconductor heterostructures and we study numerically the specific case of coupling and tuning metamaterials in the thermal infrared through coupling to biased GaAs semiconductor quantum wells. This tuning mechanism can be scaled from the visible to the far infrared by the proper choice of metamaterials and semiconductor heterostructures.