Open AccessComponents for silicon plasmonic nanocircuits based on horizontal Cu-SiO_2-Si-SiO_2-Cu nanoplasmonic waveguides
Author(s) -
Shiyang Zhu,
GuoQiang Lo,
DimLee Kwong
Publication year - 2012
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.20.005867
Subject(s) - materials science , insertion loss , optics , astronomical interferometer , silicon on insulator , optoelectronics , extinction ratio , silicon , plasmon , wavelength , waveguide , electron beam lithography , interferometry , physics , resist , nanotechnology , layer (electronics)
We report systematic results on the development of horizontal Cu-SiO₂-Si-SiO₂-Cu nanoplasmonic waveguide components operating at 1550-nm telecom wavelengths, including straight waveguides, sharp 90° bends, power splitters, and Mach-Zehnder interferometers (MZIs). Owing to the relatively low loss for propagating (~0.3 dB/µm) and for 90° sharply bending (~0.73 dB/turn), various ultracompact power splitters and MZIs are experimentally realized on a silicon-on-insulator (SOI) platform using standard CMOS technology. The demonstrated splitters exhibit a relatively low excess loss and the MZIs exhibit good performance such as high extinction ratio of ~18 dB and low normalized insertion loss of ~1.7 dB. The experimental results of these devices agree well with those predicted from numerical simulations with suitable Cu permittivity data.