Eu^3+ reduction and efficient light emission in Eu_2O_3 films deposited on Si substrates | Zendy

Gabriele Bellocchi | Zendy; G. Franzò | Zendy; F. Iacona | Zendy; Simona Boninelli | Zendy; M. Miritello | Zendy; Tiziana Cesca | Zendy; F. Priolo | Zendy

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Eu^3+ reduction and efficient light emission in Eu_2O_3 films deposited on Si substrates

Author(s) -

Gabriele Bellocchi,

G. Franzò,

F. Iacona,

Simona Boninelli,

M. Miritello,

Tiziana Cesca,

F. Priolo

Publication year - 2012

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.20.005501

Subject(s) - photoluminescence , materials science , annealing (glass) , transmission electron microscopy , sputtering , sputter deposition , diffraction , quantum efficiency , optoelectronics , thin film , luminescence , analytical chemistry (journal) , silicon , optics , nanotechnology , chemistry , physics , chromatography , composite material

A stable Eu3+ → Eu2+ reduction is accomplished by thermal annealing in N2 ambient of Eu2O3 films deposited by magnetron sputtering on Si substrates. Transmission electron microscopy and x-ray diffraction measurements demonstrate the occurrence of a complex reactivity at the Eu2O3/Si interface, leading to the formation of Eu2+ silicates, characterized by a very strong (the measured external quantum efficiency is about 10%) and broad room temperature photoluminescence (PL) peak centered at 590 nm. This signal is much more efficient than the Eu3+ emission, mainly consisting of a sharp PL peak at 622 nm, observed in O2-annealed films, where the presence of a SiO2 layer at the Eu2O3/Si interface prevents Eu2+ formation.

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