Room-temperature operation of npn- AlGaInAs/InP multiple quantum well transistor laser emitting at 13-µm wavelength | Zendy

Mizuki Shirao | Zendy; Takashi Satō | Zendy; Noriaki Sato | Zendy; Nobuhiko Nishiyama | Zendy; Shigehisa Arai | Zendy

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Room-temperature operation of npn- AlGaInAs/InP multiple quantum well transistor laser emitting at 13-µm wavelength

Author(s) -

Mizuki Shirao,

Takashi Satō,

Noriaki Sato,

Nobuhiko Nishiyama,

Shigehisa Arai

Publication year - 2012

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.20.003983

Subject(s) - materials science , optoelectronics , lasing threshold , laser , wavelength , transistor , common emitter , optics , quantum well , heterojunction , physics , quantum mechanics , voltage

Room-temperature pulsed operation of a 1.3-µm wavelength transistor laser (TL), consisting of a buried heterostructure (BH) with an npn configuration and an AlGaInAs/InP multiple-quantum-well (MQW) active region, was successfully attained. A threshold base current of 18 mA (threshold emitter current of 150 mA) was obtained with a stripe width of 1.3 µm and a cavity length of 500 µm. The transistor activity as well as the lasing operation were achieved at the same time, which is essential for the high-speed operation of TLs.

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