Open AccessRoom-temperature operation of npn- AlGaInAs/InP multiple quantum well transistor laser emitting at 13-µm wavelength
Author(s) -
Mizuki Shirao,
Takashi Satō,
Noriaki Sato,
N. Nishiyama,
Shigehisa Arai
Publication year - 2012
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.20.003983
Subject(s) - materials science , optoelectronics , lasing threshold , laser , wavelength , transistor , common emitter , optics , quantum well , heterojunction , physics , quantum mechanics , voltage
Room-temperature pulsed operation of a 1.3-µm wavelength transistor laser (TL), consisting of a buried heterostructure (BH) with an npn configuration and an AlGaInAs/InP multiple-quantum-well (MQW) active region, was successfully attained. A threshold base current of 18 mA (threshold emitter current of 150 mA) was obtained with a stripe width of 1.3 µm and a cavity length of 500 µm. The transistor activity as well as the lasing operation were achieved at the same time, which is essential for the high-speed operation of TLs.