Open AccessMid- to long-wavelength infrared plasmonic-photonics using heavily doped n-Ge/Ge and n-GeSn/GeSn heterostructures
Author(s) -
Richard A. Soref,
Joshua R. Hendrickson,
Justin W. Cleary
Publication year - 2012
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.20.003814
Subject(s) - plasmon , materials science , dielectric , optoelectronics , drude model , doping , wavelength , optics , heterojunction , photonics , infrared , terahertz radiation , physics
Heavily doped n-type Ge and GeSn are investigated as plasmonic conductors for integration with undoped dielectrics of Si, SiGe, Ge, and GeSn in order to create a foundry-based group IV plasmonics technology. N-type Ge1-xSnx with compositions of 0 ≤ x ≤ 0.115 are investigated utilizing effective-mass theory and Drude considerations. The plasma wavelengths, relaxation times, and complex permittivities are determined as functions of the free carrier concentration over the range of 10(10) to 10(21) cm-3. Basic plasmonic properties such as propagation loss and mode height are calculated and example numerical simulations are shown of a dielectric-conductor-dielectric ribbon waveguide structure are shown. Practical operation in the 2 to 20 μm wavelength range is predicted.