Open AccessRoom-temperature continuous-wave operation of lateral current injection wavelength-scale embedded active-region photonic-crystal laser
Author(s) -
Shinji Matsuo,
Koji Takeda,
Tomonari Sato,
Masaya Notomi,
Akihiko Shinya,
Kengo Nozaki,
Hideaki Taniyama,
Koichi Hasebe,
Takaaki Kakitsuka
Publication year - 2012
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.20.003773
Subject(s) - materials science , lasing threshold , optoelectronics , laser , photonic crystal , optics , wavelength , semiconductor laser theory , continuous wave , photonic integrated circuit , semiconductor , physics
We have developed a wavelength-scale embedded active-region photonic-crystal laser using lateral p-i-n structure. Zn diffusion and Si ion implantation are used for p- and n-type doping. Room-temperature continuous-wave lasing behavior is clearly observed from the injection current dependence of the output power, 3dB-bandwidth of the peak, and lasing wavelength. The threshold current is 390 μA and the estimated effective threshold current is 9.4 μA. The output power in output waveguide is 1.82 μW for a 2.0-mA current injection. These results indicate that the embedded active-region structure effectively reduce the thermal resistance. Ultrasmall electrically driven lasers are an important step towards on-chip photonic network applications.