Open Access23 GHz Ge/SiGe multiple quantum well electro-absorption modulator
Author(s) -
Papichaya Chaisakul,
Delphine MarrisMorini,
Mohamed Saïd Rouifed,
Giovanni Isella,
D. Chrastina,
Jacopo Frigerio,
Xavier Le Roux,
Samson Edmond,
JeanRené Coudevylle,
Laurent Vivien
Publication year - 2012
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.20.003219
Subject(s) - extinction ratio , materials science , electro absorption modulator , optoelectronics , optics , photonics , optical modulator , waveguide , bandwidth (computing) , absorption (acoustics) , quantum well , physics , semiconductor , phase modulation , telecommunications , quantum dot laser , semiconductor laser theory , wavelength , laser , computer science , phase noise
We report on high speed operation of a Ge/SiGe multiple quantum well (MQW) electro-absorption modulator in a waveguide configuration. 23 GHz bandwidth is experimentally demonstrated from a 3 µm wide and 90 µm long Ge/SiGe MQW waveguide. The modulator exhibits a high extinction ratio of more than 10 dB over a wide spectral range. Moreover with a swing voltage of 1 V between 3 and 4 V, an extinction ratio as high as 9 dB can be obtained with a corresponding estimated energy consumption of 108 fJ per bit. This demonstrates the potentiality of Ge/SiGe MQWs as a building block of silicon compatible photonic integrated circuits for short distance energy efficient optical interconnections.