Open Access25 Gbit/s silicon microring modulator based on misalignment-tolerant interleaved PN junctions
Author(s) -
Xi Xiao,
Hao Xu,
Xianyao Li,
Yingtao Hu,
Kedi Xiong,
Zhiyong Li,
Tao Chu,
Yude Yu,
Jinzhong Yu
Publication year - 2012
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.20.002507
Subject(s) - extinction ratio , materials science , modulation (music) , optics , doping , optoelectronics , gigabit , silicon , physics , wavelength , acoustics
A high-speed depletion-mode silicon-based microring modulator with interleaved PN junctions optimized for high modulation efficiency and large alignment tolerance is demonstrated. It is fabricated using standard 0.18 μm complementary metal-oxide-semiconductor processes and provides low V(π)L(π)s of 0.68 V·cm to 1.64 V·cm with a moderate doping concentration of 2 × 10(17) cm(-3). The measured modulation efficiency decreases by only 12.4% under ± 150 nm alignment errors. 25 Gbit/s non-return-zero modulation with a 4.5 dB extinction ratio is experimentally realized at a peak-to-peak driving voltage of 2 V, demonstrating the excellent performance of the novel doping profile.