Open AccessHigh-temperature HgTe/CdTe multiple-quantum-well lasers
Author(s) -
I. Vurgaftman,
J. R. Meyer
Publication year - 1998
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.2.000137
Subject(s) - auger effect , lasing threshold , quantum well , laser , materials science , diode , semiconductor laser theory , optoelectronics , optics , absorption (acoustics) , infrared , auger , atomic physics , physics
While most previous studies of Hg-based mid-IR lasers have focused on either bulk Hg(1-x)Cd(x)Te alloys or thick (> 100 A) Hg(1-x)Cd(x)Te quantum wells with relatively large x, we show that much thinner (20-30 A) HgTe binary wells may be engineered to suppress both Auger recombination and intervalence free carrier absorption. On the basis of detailed numerical simulations, we predict 4.3 m cw emission at temperatures up to 220 K for optical pumping and 105 K for diode operation. In pulsed mode, we expect maximum lasing temperatures more than 100 K higher than any prior Hg-based mid-IR result.