Open AccessGaN-based light-emitting diodes with photonic crystals structures fabricated by porous anodic alumina template
Author(s) -
Xingxing Fu,
Zhang Bei,
Xiaoning Kang,
Junjing Deng,
Chao Xiong,
Dai Taguchi,
Xiaomin Jiang,
Tongjun Yu,
Zhizhong Chen,
Guo Yi Zhang
Publication year - 2011
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.19.0a1104
Subject(s) - materials science , optoelectronics , etching (microfabrication) , light emitting diode , reactive ion etching , dry etching , anode , photonic crystal , diode , porosity , wavelength , optics , nanotechnology , electrode , composite material , layer (electronics) , chemistry , physics
In this paper, we propose and demonstrate a convenient and flexible approach for preparation large-area of photonic crystals (PhCs) structures on the GaN-based LED chip. The highly-ordered porous anodic alumina (AAO) with pitch of wavelength scale was adopted as a selective dry etching mask for PhCs-pattern transfer. The PhCs with different pore depths were simultaneously formed on the entire surfaces of GaN-based LED chip including ITO, GaN surrounding contacts and the sidewall of the mesa by one-step reactive ion etching (RIE). The light output power improvement of PhCs-based GaN LED was achieved as high as 94% compared to that of the conventional GaN-based LED.