Open AccessBroadband near-infrared emission in Tm^3+-Dy^3+ codoped amorphous chalcohalide films fabricated by pulsed laser deposition
Author(s) -
Sen Yang,
Xuefeng Wang,
Haitao Guo,
Guoping Dong,
Bo Peng,
Jianrong Qiu,
Rong Zhang,
Yi Wei Shi
Publication year - 2011
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.19.026529
Subject(s) - materials science , amorphous solid , raman spectroscopy , laser , optoelectronics , optics , pulsed laser deposition , spectroscopy , absorption (acoustics) , infrared , x ray photoelectron spectroscopy , thin film , nanotechnology , chemistry , physics , organic chemistry , quantum mechanics , composite material , nuclear magnetic resonance
Structural and near-infrared (NIR) emission properties were investigated in the Tm(3+)-Dy(3+) codoped Ge-Ga-based amorphous chalcohalide films fabricated by pulsed laser deposition. The homogeneous films illustrated similar random network to the glass target according to the measurements of X-ray diffraction, X-ray photoelectron spectroscopy, and Raman spectroscopy. An 808 nm laser diode pumping generated a superbroadband NIR emission ranging from 1050 to 1570 nm and the other intense broadband NIR emission centered at ~1800 nm, which was attributed to the efficient energy transfer from Tm(3+) to Dy(3+) ions. This was further verified by the broad-range excitation measurements near the Urbach optical-absorption edge involved defect states. The results shed light on the potential highly integrated planar optical device applications of the codoped amorphous chalcohalide films.