Open AccessCoherent and directional emission at 155 μm from PbSe colloidal quantum dot electroluminescent device on silicon
Author(s) -
Junseok Heo,
Zhenyu Jiang,
Jian Xu,
P. Bhattacharya
Publication year - 2011
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.19.026394
Subject(s) - electroluminescence , materials science , quantum dot , laser linewidth , optoelectronics , distributed bragg reflector , indium tin oxide , silicon , spontaneous emission , optics , light emission , laser , nanotechnology , thin film , physics , wavelength , layer (electronics)
Coherent and directional emission at 1.55 μm from a PbSe colloidal quantum dot electroluminescent device on silicon is demonstrated. The quantum dots are sandwiched between a metallic mirror and a distributed Bragg reflector and are chemically treated in order to increase the electronic coupling. Electrons and holes are injected through ZnO nanocrystals and indium tin oxide, respectively. The measured electroluminescence exhibits a minimum linewidth of ~3.1 nm corresponding to a cavity quality factor of ~500 at a low injection current density of 3 A/cm2, and highly directional emission characteristics.