Open AccessOptical performance of top-down fabricated InGaN/GaN nanorod light emitting diode arrays
Author(s) -
Qiming Li,
Karl Westlake,
Mary H. Crawford,
Stephen R. Lee,
Daniel Koleske,
Jeffery J. Figiel,
Karen Charlene Cross,
Saeed Fathololoumi,
Zetian Mi,
George T. Wang
Publication year - 2011
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.19.025528
Subject(s) - nanorod , materials science , light emitting diode , optoelectronics , photoluminescence , diode , fabrication , planar , quantum confined stark effect , gallium nitride , plasma etching , piezoelectricity , wide bandgap semiconductor , etching (microfabrication) , indium gallium nitride , optics , quantum well , nanotechnology , laser , composite material , layer (electronics) , medicine , alternative medicine , computer graphics (images) , physics , pathology , computer science
Vertically aligned InGaN/GaN nanorod light emitting diode (LED) arrays were created from planar LED structures using a new top-down fabrication technique consisting of a plasma etch followed by an anisotropic wet etch. The wet etch results in straight, smooth, well-faceted nanorods with controllable diameters and removes the plasma etch damage. 94% of the nanorod LEDs are dislocation-free and a reduced quantum confined Stark effect is observed due to reduced piezoelectric fields. Despite these advantages, the IQE of the nanorod LEDs measured by photoluminescence is comparable to the planar LED, perhaps due to inefficient thermal transport and enhanced nonradiative surface recombination.