Open AccessNanosphere natural lithography surface texturing as anti-reflective layer on SiC photodiodes
Author(s) -
Qiugui Zhou,
Dion McIntosh,
Yaojia Chen,
Wenlu Sun,
Zhi Li,
Joe C. Campbell
Publication year - 2011
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.19.023664
Subject(s) - photodiode , materials science , anti reflective coating , responsivity , optics , optoelectronics , lithography , etching (microfabrication) , angle of incidence (optics) , total internal reflection , layer (electronics) , photodetector , nanotechnology , physics
Natural lithography with 100-nm-diameter SiO(2) spheres followed by inductively coupled plasma etching was used to texture the surface of 4H-SiC for a wide-spectrum large-acceptance-angle anti-reflective layer. The surface showed low normal-incidence reflectance of < 5% over a wide spectrum from 250 nm to 550 nm. Photodiodes fabricated from the surface-textured SiC showed broader spectral and angular responsivity than SiC photodiodes with SiO(2) antireflective coating. The textured SiC photodiodes showed peak responsivity of 116 mA/W, large angle of acceptance angle (< 2% decrease in responsivity at 50° incident angle) and low dark current at 10V.