Open AccessEnhanced light output power of near UV light emitting diodes with graphene / indium tin oxide nanodot nodes for transparent and current spreading electrode
Author(s) -
Tae Hoon Seo,
Kang Jea Lee,
Ah Hyun Park,
Chang–Hee Hong,
Eun–Kyung Suh,
Seung Jin Chae,
Young Hee Lee,
Trần Viết Cường,
Việt Hùng Phạm,
Jin Suk Chung,
Eui Jung Kim,
Sohee Jeon
Publication year - 2011
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.19.023111
Subject(s) - materials science , indium tin oxide , graphene , optoelectronics , nanodot , light emitting diode , ultraviolet , transmittance , electrode , oxide , diode , optics , thin film , nanotechnology , chemistry , physics , metallurgy
We report GaN-based near ultraviolet (UV) light emitting diode (LED) that combines indium tin oxide (ITO) nanodot nodes with two-dimensional graphene film as a UV-transparent current spreading electrode (TCSE) to give rise to excellent UV emission efficiency. The light output power of 380 nm emitting UV-LEDs with graphene film on ITO nanodot nodes as TCSE was enhanced remarkably compared to conventional TCSE. The increase of the light output power is attributed to high UV transmittance of graphene, effective current spreading and injection, and texturing effect by ITO nanodots.