Open AccessElectric field-induced coherent control in GaAs: polarization dependence and electrical measurement [Invited]
Author(s) -
J. K. Wahlstrand,
H. Zhang,
Soobong Choi,
J. E. Sipe,
Steven T. Cundiff
Publication year - 2011
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.19.022563
Subject(s) - photocurrent , electric field , optics , semiconductor , polarization (electrochemistry) , laser , semiconductor laser theory , optoelectronics , physics , materials science , chemistry , quantum mechanics
A static electric field enables coherent control of the photoexcited carrier density in a semiconductor through the interference of one- and two-photon absorption. An experiment using optical detection is described. The polarization dependence of the signal is consistent with a calculation using a 14-band k · p model for GaAs. We also describe an electrical measurement. A strong enhancement of the phase-dependent photocurrent through a metal-semiconductor-metal structure is observed when a bias of a few volts is applied. The dependence of the signal on bias and laser spot position is studied. The field-induced enhancement of the signal could increase the sensitivity of semiconductor-based carrier-envelope phase detectors, useful in stabilizing mode-locked lasers for use in frequency combs.