Open Access25Gb/s 1V-driving CMOS ring modulator with integrated thermal tuning
Author(s) -
Guoliang Li,
Xuezhe Zheng,
Jin Yao,
Hiren Thacker,
Ivan Shubin,
Ying Luo,
Kannan Raj,
J. E. Cunningham,
Ashok V. Krishnamoorthy
Publication year - 2011
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.19.020435
Subject(s) - extinction ratio , materials science , cmos , optics , optoelectronics , microwave , modulation (music) , wavelength , physics , computer science , telecommunications , acoustics
We report a high-speed ring modulator that fits many of the ideal qualities for optical interconnect in future exascale supercomputers. The device was fabricated in a 130 nm SOI CMOS process, with 7.5 μm ring radius. Its high-speed section, employing PN junction that works at carrier-depletion mode, enables 25 Gb/s modulation and an extinction ratio >5 dB with only 1V peak-to-peak driving. Its thermal tuning section allows the device to work in broad wavelength range, with a tuning efficiency of 0.19 nm/mW. Based on microwave characterization and circuit modeling, the modulation energy is estimated ~7 fJ/bit. The whole device fits in a compact 400 μm2 footprint.