Open AccessHigh quantum efficiency GaP avalanche photodiodes
Author(s) -
Dion McIntosh,
Qiugui Zhou,
Yaojia Chen,
Joe C. Campbell
Publication year - 2011
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.19.019607
Subject(s) - avalanche photodiode , apds , gallium phosphide , optics , quantum efficiency , single photon avalanche diode , optoelectronics , dark current , photodiode , avalanche diode , indium phosphide , materials science , gallium arsenide , physics , photodetector , breakdown voltage , voltage , quantum mechanics , detector
Gallium Phosphide (GaP) reach-through avalanche photodiodes (APDs) are reported. The APDs exhibited dark current less than a pico-ampere at unity gain. A quantum efficiency of 70% was achieved with a recessed window structure; this is almost two times higher than previous work.