High quantum efficiency GaP avalanche photodiodes | Zendy

Dion McIntosh | Zendy; Qiugui Zhou | Zendy; Yaojia Chen | Zendy; Joe C. Campbell | Zendy

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High quantum efficiency GaP avalanche photodiodes

Author(s) -

Dion McIntosh,

Qiugui Zhou,

Yaojia Chen,

Joe C. Campbell

Publication year - 2011

Publication title -

optics express

Language(s) - Uncategorized

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.19.019607

Subject(s) - avalanche photodiode , apds , gallium phosphide , optics , quantum efficiency , single photon avalanche diode , optoelectronics , dark current , photodiode , avalanche diode , indium phosphide , materials science , gallium arsenide , physics , photodetector , breakdown voltage , voltage , quantum mechanics , detector

Gallium Phosphide (GaP) reach-through avalanche photodiodes (APDs) are reported. The APDs exhibited dark current less than a pico-ampere at unity gain. A quantum efficiency of 70% was achieved with a recessed window structure; this is almost two times higher than previous work.

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