Open AccessEffect of the thickness of undoped GaN interlayers between multiple quantum wells and the p-doped layer on the performance of GaN light-emitting diodes
Author(s) -
Taiping Lü,
Shuti Li,
Kang Zhang,
Chao Liu,
Yongsheng Yin,
Le-Juan Wu,
Hailong Wang,
Xiaodong Yang,
Guowei Xiao,
Yugang Zhou
Publication year - 2011
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.19.018319
Subject(s) - materials science , light emitting diode , optoelectronics , chemical vapor deposition , diode , doping , metalorganic vapour phase epitaxy , layer (electronics) , quantum well , wide bandgap semiconductor , gallium nitride , leakage (economics) , quantum efficiency , optics , composite material , laser , epitaxy , physics , economics , macroeconomics
InGaN based light-emitting diodes (LEDs) with undoped GaN interlayer of variant thicknesses grown by metal-organic chemical vapor deposition technique have been investigated. It was found that the thickness of undoped GaN interlayers affected LEDs' performance greatly. The LED with 50 nm undoped GaN interlayer showed higher light output power and lower reverse-leakage current compared with the others at 20 mA. Based on electrical and optical characteristics analysis and numerical simulation, these improvements are mainly attributed to the improvement of the quality of depletion region by inserting an undoped GaN layer, as well as reduction of the Shockley-Read-Hall recombination in InGaN/GaN MQWs.