Open Access8 mW fundamental mode output of wafer-fused VCSELs emitting in the 1550-nm band
Author(s) -
A. Caliman,
A. Mereuta,
G. Suruceanu,
В. Яковлев,
Alexei Sirbu,
E. Kapon
Publication year - 2011
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.19.016996
Subject(s) - wafer , materials science , optoelectronics , optics , vertical cavity surface emitting laser , photonics , wavelength , laser , gallium arsenide , physics
We report record-high fundamental mode output power of 8 mW at 0 °C and 1.5 mW at 100°C achieved with wafer-fused InAlGaAs-InP/AlGaAs-GaAs 1550 nm VCSELs incorporating a re-grown tunnel junction and un-doped AlGaAs/GaAs distributed Bragg reflectors. A broad wavelength tuning range of 15 nm by current variation and wavelength setting in a spectral range of 40 nm on the same VCSEL wafer are demonstrated as well. This performance positions wafer-fused VCSELs as prime candidates for many applications in low power consumption, "green" photonics.