Open AccessDoubling the spatial frequency with cavity resonance lithography
Author(s) -
Hyesog Lee,
Ravi Verma
Publication year - 2011
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.19.016518
Subject(s) - optics , lithography , diffraction , offset (computer science) , photolithography , photoresist , spatial frequency , materials science , resist , immersion lithography , resonance (particle physics) , photomask , x ray lithography , physics , computer science , nanotechnology , layer (electronics) , particle physics , programming language
We describe the theory and report the first experimental demonstration of Cavity Resonance Lithography (CRL); a double pattering (DP) technique that can generate patterns on a photoresist 1) with twice the spatial frequency of that of the diffraction limited lithography mask, and 2) at an offset distance that is in the far field of the mask. CRL requires only a single exposure and development step and does not require any additional processes. With commercially available photoresists (PR) and developers, we have recorded a 32.5 nm half-pitch pattern (which is well below the diffraction limit) at an offset distance of 180 nm (which is well beyond the evanescent decay length scales) using 193 nm illumination. We also discuss strategies to improve the minimum feature size and potential implementation schemes.