Open AccessAir-gap structure between integrated LiNbO_3 optical modulators and micromachined Si substrates
Author(s) -
Ryo Takigawa,
Eiji Higurashi,
Tadatomo Suga,
Tetsuya Kawanishi
Publication year - 2011
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.19.015739
Subject(s) - materials science , surface micromachining , substrate (aquarium) , air gap (plumbing) , optical modulator , optoelectronics , silicon , optics , modulation (music) , lithium niobate , optical switch , fabrication , phase modulation , medicine , oceanography , alternative medicine , physics , pathology , phase noise , composite material , geology , philosophy , aesthetics
The air-gap structure between integrated LiNbO(3) optical modulators and micromachined Si substrates is reported for high-speed optoelectronic systems. The calculated and experimental results show that the high permittivity of the Si substrate decreases the resonant modulation frequency to 10 GHz LiNbO(3) resonant-type optical modulator chips on the Si substrate. To prevent this substrate effect, an air-gap was formed between the LiNbO(3) modulator and the Si substrate. The ability to fabricate the air-gap structure was demonstrated using low-temperature flip-chip bonding (100 °C) and a Si micromachining process, and its performance was experimentally verified.