Ten Gbit/s ring resonator silicon modulator based on interdigitated PN junctions | Zendy

Mélissa Ziebell | Zendy; Delphine MarrisMorini | Zendy; G. Rasigade | Zendy; P. Crozat | Zendy; Jean-Marc Fédéli | Zendy; Philippe Grosse | Zendy; Éric Cassan | Zendy; Laurent Vivien | Zendy

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Ten Gbit/s ring resonator silicon modulator based on interdigitated PN junctions

Author(s) -

Mélissa Ziebell,

Delphine MarrisMorini,

G. Rasigade,

P. Crozat,

Jean-Marc Fédéli,

Philippe Grosse,

Éric Cassan,

Laurent Vivien

Publication year - 2011

Publication title -

optics express

Language(s) - Uncategorized

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.19.014690

Subject(s) - extinction ratio , resonator , optics , gigabit , materials science , silicon , phase modulation , extinction (optical mineralogy) , optoelectronics , physics , wavelength , phase noise

10 Gbit/s silicon modulator based on carrier depletion in interdigitated PN junctions is experimentally demonstrated. The phase-shifter is integrated in a ring resonator, and high extinction ratio larger than 10 dB is obtained in both TE and TM polarizations. VπLπ of about 2.5 V × cm and optical loss lower than 1 dB are estimated. 10 Gbit/s data transmission is demonstrated with an extinction ratio of 4 dB.

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