Open AccessTen Gbit/s ring resonator silicon modulator based on interdigitated PN junctions
Author(s) -
Mélissa Ziebell,
Delphine MarrisMorini,
G. Rasigade,
P. Crozat,
Jean-Marc Fédéli,
Philippe Grosse,
Éric Cassan,
Laurent Vivien
Publication year - 2011
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.19.014690
Subject(s) - extinction ratio , resonator , optics , gigabit , materials science , silicon , phase modulation , extinction (optical mineralogy) , optoelectronics , physics , wavelength , phase noise
10 Gbit/s silicon modulator based on carrier depletion in interdigitated PN junctions is experimentally demonstrated. The phase-shifter is integrated in a ring resonator, and high extinction ratio larger than 10 dB is obtained in both TE and TM polarizations. VπLπ of about 2.5 V × cm and optical loss lower than 1 dB are estimated. 10 Gbit/s data transmission is demonstrated with an extinction ratio of 4 dB.