Open AccessOrange a-plane InGaN/GaN light-emitting diodes grown on r-plane sapphire substrates
Author(s) -
Yong Gon Seo,
Kwang Hyeon Baik,
Hooyoung Song,
Ji Su Son,
Kyunghwan Oh,
Soon Jung Hwang
Publication year - 2011
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.19.012919
Subject(s) - materials science , light emitting diode , metalorganic vapour phase epitaxy , sapphire , chemical vapor deposition , optoelectronics , full width at half maximum , diode , wavelength , optics , blueshift , polarization (electrochemistry) , laser , epitaxy , photoluminescence , chemistry , physics , nanotechnology , layer (electronics)
We report on orange a-plane light-emitting diodes (LEDs) with InGaN single quantum well (SQW) grown on r-plane sapphire substrates by metal organic chemical vapor deposition (MOCVD). The peak wavelength and the full-width at half maximum (FWHM) at a drive current of 20mA were 612.2 nm and 72 nm, respectively. The device demonstrated a blue shift in emission wavelength from 614.6 nm at 10 mA to 607.5 nm at 100 mA, representing a net shift of 7.1 nm over a 90 mA range, which is the longest wavelength compared with reported values in nonpolar LEDs. The polarization ratio values obtained from the orange LED varied between 0.36 and 0.44 from 10 to 100mA and a weak dependence of the polarization ratio on the injection current was observed.