Open AccessDesign and fabrication of vertical-injection GaN-based light-emitting diodes
Author(s) -
Hyunsoo Kim,
Kyoung-Kook Kim,
SungNam Lee,
Kwang Hyeon Baik
Publication year - 2011
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.19.00a937
Subject(s) - materials science , fabrication , light emitting diode , optoelectronics , diode , etching (microfabrication) , electroplating , electrode , optics , layer (electronics) , nanotechnology , medicine , chemistry , alternative medicine , physics , pathology
The fabrication process and design issues for the fabrication of vertical-injection GaN-based light-emitting diodes were investigated. The process yield was reduced according to the adhesion of reflective p-electrodes, the exposure of electroplated metal in plasma, and wet-etching induced surface textures. The chip design utilizing current blocking layer and branched n-electrode was found to significantly affect the power efficiency of LEDs.