Design and fabrication of vertical-injection GaN-based light-emitting diodes | Zendy

Hyunsoo Kim | Zendy; KyoungKook Kim | Zendy; SungNam Lee | Zendy; Kwang-Hyeon Baik | Zendy

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Design and fabrication of vertical-injection GaN-based light-emitting diodes

Author(s) -

Hyunsoo Kim,

KyoungKook Kim,

SungNam Lee,

Kwang-Hyeon Baik

Publication year - 2011

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.19.00a937

Subject(s) - materials science , fabrication , light emitting diode , optoelectronics , diode , etching (microfabrication) , electroplating , electrode , optics , layer (electronics) , nanotechnology , medicine , chemistry , alternative medicine , physics , pathology

The fabrication process and design issues for the fabrication of vertical-injection GaN-based light-emitting diodes were investigated. The process yield was reduced according to the adhesion of reflective p-electrodes, the exposure of electroplated metal in plasma, and wet-etching induced surface textures. The chip design utilizing current blocking layer and branched n-electrode was found to significantly affect the power efficiency of LEDs.

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