Open AccessUltraviolet electroluminescence from hybrid inorganic/organic ZnO/GaN/poly(3-hexylthiophene) dual heterojunctions
Author(s) -
Yung-Ting Chen,
Hong-Mou Shih,
Chun-Hsiung Wang,
Chun-Yi Hsieh,
ChihWei Chen,
Yangfang Chen,
TaiYuan Lin
Publication year - 2011
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.19.00a319
Subject(s) - electroluminescence , materials science , optoelectronics , light emitting diode , photoluminescence , ultraviolet , nanorod , heterojunction , luminescence , current density , layer (electronics) , nanotechnology , physics , quantum mechanics
Based on hybrid inorganic/organic n-ZnO nanorods/p-GaN thin film/poly(3-hexylthiophene)(P3HT) dual heterojunctions, the light emitting diode (LED) emits ultraviolet (UV) radiation (370 nm - 400 nm) and the whole visible light (400 nm -700 nm) at the low injection current density. Meanwhile, under the high injection current density, the UV radiation overwhelmingly dominates the room-temperature electroluminescence spectra, exponentially increases with the injection current density and possesses a narrow full width at half maximum less than 16 nm. Comparing electroluminescence with photoluminescence spectra, an enormously enhanced transition probability of the UV luminescence in the electroluminescence spectra was found. The P3HT layer plays an essential role in helping the UV emission from p-GaN material because of its hole-conductive characteristic as well as the band alignment with respect to p-GaN. With our new finding, the result shown here may pave a new route for the development of high brightness LEDs derived from hybrid inorganic/organic heterojuctions.