Open AccessOptical confinement achieved in ZnO crystal by O^+ ions implantation: analysis of waveguide formation and properties
Author(s) -
Xianbing Ming,
Fei Lu,
Jiao-Jian Yin,
Ming Chen,
Shaomei Zhang,
Xiuhong Liu,
Zhenhua Qin,
Yujie Ma
Publication year - 2011
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.19.007139
Subject(s) - materials science , waveguide , optics , ion , planar , ion implantation , crystal (programming language) , refractive index , optoelectronics , wavelength , chemistry , physics , computer graphics (images) , organic chemistry , computer science , programming language
Optical confinement in ZnO crystal was observed by O(+) implantation with different MeV energies and doses. Planar optical waveguides were formed in the as-implanted ZnO samples. The optical properties of the planar waveguide were investigated by the prism-coupling and the end-face coupling methods at the wavelength of 633 nm. The crystal lattice damage in the guiding region caused by the O(+) ions implantation was analyzed by the Rutherford backscattering/Channeling technique, results show that even high dose at 2 × 10(15) ions/cm(2) can hardly produce defect in near surface of ZnO. A theoretical model is developed to explain the principle of waveguide formation in ZnO crystal and the refractive index profile in the implanted waveguide was reconstructed accordingly. The experimental result and analysis are significant for application of ZnO crystal, especially for the design of ZnO light emitter devices.