Open Access30GHz Ge electro-absorption modulator integrated with 3μm silicon-on-insulator waveguide
Author(s) -
NingNing Feng,
Dazeng Feng,
Shirong Liao,
Xin Wang,
Po Dong,
Hong Liang,
Cheng-Chih Kung,
Wei Qian,
Joan Fong,
Roshanak Shafiiha,
Ying Luo,
J. E. Cunningham,
Ashok V. Krishnamoorthy,
Mehdi Asghari
Publication year - 2011
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.19.007062
Subject(s) - extinction ratio , materials science , silicon on insulator , optics , insertion loss , waveguide , optical modulator , electro absorption modulator , optoelectronics , silicon , free spectral range , modulation (music) , wavelength , physics , phase modulation , semiconductor laser theory , quantum dot laser , phase noise , acoustics , diode
We demonstrate a compact waveguide-based high-speed Ge electro-absorption (EA) modulator integrated with a single mode 3 µm silicon-on-isolator (SOI) waveguide. The Ge EA modulator is based on a horizontally-oriented p-i-n structure butt-coupled with a deep-etched silicon waveguide, which transitions adiabatically to a shallow-etched single mode large core SOI waveguide. The demonstrated device has a compact active region of 1.0 × 45 µm(2), a total insertion loss of 2.5-5 dB and an extinction ratio of 4-7.5 dB over a wavelength range of 1610-1640 nm with -4V(pp) bias. The estimated Δα/α value is in the range of 2-3.3. The 3 dB bandwidth measurements show that the device is capable of operating at more than 30 GHz. Clear eye-diagram openings at 12.5 Gbps demonstrates large signal modulation at high transmission rate.