
A 533-nm self-luminescent Si-rich SiN_x/SiO_x distributed Bragg reflector
Author(s) -
GongRu Lin,
ChengLung Wu,
YiHao Pai
Publication year - 2011
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.19.006563
Subject(s) - laser linewidth , materials science , distributed bragg reflector , luminescence , photoluminescence , optics , optoelectronics , wavelength , laser , physics
A 24-pair Si-rich SiNx/SiOx-based distributed Bragg reflector (DBR) architecture, in situ doped with Si nanocrystals (Si-ncs), is studied to show self-photoluminescence (PL) with narrow-linewidth green-color emission pattern. By cascaded depositing, the broadband luminescent SiNx/SiOx pairs with SiNx and SiOx layer thickness of 45 and 86 nm and corresponding refractive indices of 1.96 and 1.62, respectively, and the transmitted PL linewidth of the in situ Si-nc-doped DBR emitter/filter centered at a wavelength of 533 nm greatly reduces from 150 to 10 nm, which is achieved by blocking the UV and blue luminescence at 400-510 nm with the DBR filter bandwidth up to 95 nm. A multilayer DBR modeling is established to simulate the transmitted PL from the summation of each emissive SiNx/SiOx pair, providing a coincident PL shape with a spectral linewidth of 15 nm.