Open AccessNovel evanescent-coupled germanium electro-absorption modulator featuring monolithic integration with germanium p-i-n photodetector
Author(s) -
Andy Eu-Jin Lim,
Tsung-Yang Liow,
FengLing Qing,
Ning Duan,
Ding Liang,
Mingbin Yu,
GuoQiang Lo,
DimLee Kwong
Publication year - 2011
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.19.005040
Subject(s) - germanium , photodetector , optics , materials science , extinction ratio , optoelectronics , absorption (acoustics) , modulation (music) , optical modulator , wavelength , electro optic modulator , extinction (optical mineralogy) , phase modulation , silicon , physics , acoustics , phase noise
We report a novel evanescent-coupled germanium (Ge) electro-absorption (EA) modulator with a small active area of 16 μm2 giving an extinction ratio of at least 10 dB for a wavelength range of 1580-1610 nm. The modulation efficiency of the modulator at this wavelength range was
~2 dB/V. In addition, monolithic integration of both evanescent-coupled Ge EA modulator and Ge p-i-n photodetector is demonstrated for the first time.