GaAs-based surface-normal optical modulator compared to Si and its wavelength response characterization using a supercontinuum laser | Zendy

Ojas P. Kulkarni | Zendy; Md. Nazrul Islam | Zendy; Fred L. Terry | Zendy

Open Access

GaAs-based surface-normal optical modulator compared to Si and its wavelength response characterization using a supercontinuum laser

Author(s) -

Ojas P. Kulkarni,

Md. Nazrul Islam,

Fred L. Terry

Publication year - 2011

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.19.004076

Subject(s) - supercontinuum , optics , materials science , modulation (music) , wavelength , spatial light modulator , optical modulator , electro optic modulator , broadband , optoelectronics , laser , multiplexing , phase modulation , physics , telecommunications , photonic crystal fiber , computer science , acoustics , phase noise

A GaAs-based surface-normal optical modulator using the free-carrier effect is demonstrated for the first time to our knowledge. The device exhibits ~43% modulation depth compared to 24% for a previously demonstrated Si-based device with twice the interaction length. Simulations predict ~1.8 times the speeds for GaAs-based devices compared to Si. Operation in conjunction with a supercontinuum source is used to characterize the wavelength response of the modulator. Potential for colorless operation makes the modulator a candidate for wavelength-division multiplexed networks with broadband light sources.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research