Open AccessGaAs-based surface-normal optical modulator compared to Si and its wavelength response characterization using a supercontinuum laser
Author(s) -
Ojas P. Kulkarni,
M. N. Islam,
Fred L. Terry
Publication year - 2011
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.19.004076
Subject(s) - supercontinuum , optics , materials science , modulation (music) , wavelength , spatial light modulator , optical modulator , electro optic modulator , broadband , optoelectronics , laser , multiplexing , phase modulation , physics , telecommunications , photonic crystal fiber , computer science , acoustics , phase noise
A GaAs-based surface-normal optical modulator using the free-carrier effect is demonstrated for the first time to our knowledge. The device exhibits ~43% modulation depth compared to 24% for a previously demonstrated Si-based device with twice the interaction length. Simulations predict ~1.8 times the speeds for GaAs-based devices compared to Si. Operation in conjunction with a supercontinuum source is used to characterize the wavelength response of the modulator. Potential for colorless operation makes the modulator a candidate for wavelength-division multiplexed networks with broadband light sources.