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Analytical model for depletion-based silicon modulator simulation
Author(s) -
G. Rasigade,
Delphine MarrisMorini,
Mélissa Ziebell,
Éric Cassan,
Laurent Vivien
Publication year - 2011
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.19.003919
Subject(s) - optics , silicon , waveguide , diode , computer simulation , computer science , materials science , physics , optoelectronics , simulation
An original method to simulate depletion-based silicon modulators based on an analytical description of the active region is presented. This method is fast and efficient in particular for performance optimization. It is applied for a lateral diode integrated in a rib waveguide, and a comparison is performed with classical 2D numerical simulation. A very good agreement is obtained, showing the accuracy and efficiency of this analytical method.

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