Open AccessComparison of various surface textured layer in InGaN LEDs for high light extraction efficiency
Author(s) -
Ji Hye Kang,
Joon-Gyu Ryu,
Hyun Kyu Kim,
Hee Yun Kim,
Nam Han,
Young Jae Park,
Periyayya Uthirakumar,
Chang–Hee Hong
Publication year - 2011
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.19.003637
Subject(s) - light emitting diode , materials science , ohmic contact , optoelectronics , layer (electronics) , etching (microfabrication) , diode , optics , wide bandgap semiconductor , gallium nitride , composite material , physics
The various surface texturing effects of InGaN light emitting diodes (LEDs) have been investigated by comparison of experimented data and simulated data. The single-layer and double-layer texturing were performed with the help of ITO nanospheres using wet etching, where the ITO ohmic contact layer and the p-GaN layer are textured using ITO nanospheres as an etch mask. In case of single-layer texturing, p-type GaN layer texturing was more effective than ITO ohmic contact layer texturing. The maximum enhancement of wall-plug efficiency of double-layered textured LEDs is 40% more than conventional LEDs, after packaging at an injected current of 20 mA. The increase of light scattering at the textured GaN surfaces is a major reason for increasing the light extraction efficiency of LEDs.