Comparison of various surface textured layer in InGaN LEDs for high light extraction efficiency | Zendy

Ji Hye Kang | Zendy; Jae Hyoung Ryu | Zendy; Hyun Kyu Kim | Zendy; Hee Yun Kim | Zendy; Nam Han | Zendy; Young Jae Park | Zendy; Periyayya Uthirakumar | Zendy; ChangHee Hong | Zendy

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Comparison of various surface textured layer in InGaN LEDs for high light extraction efficiency

Author(s) -

Ji Hye Kang,

Jae Hyoung Ryu,

Hyun Kyu Kim,

Hee Yun Kim,

Nam Han,

Young Jae Park,

Periyayya Uthirakumar,

ChangHee Hong

Publication year - 2011

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.19.003637

Subject(s) - light emitting diode , materials science , ohmic contact , optoelectronics , layer (electronics) , etching (microfabrication) , diode , optics , wide bandgap semiconductor , composite material , physics

The various surface texturing effects of InGaN light emitting diodes (LEDs) have been investigated by comparison of experimented data and simulated data. The single-layer and double-layer texturing were performed with the help of ITO nanospheres using wet etching, where the ITO ohmic contact layer and the p-GaN layer are textured using ITO nanospheres as an etch mask. In case of single-layer texturing, p-type GaN layer texturing was more effective than ITO ohmic contact layer texturing. The maximum enhancement of wall-plug efficiency of double-layered textured LEDs is 40% more than conventional LEDs, after packaging at an injected current of 20 mA. The increase of light scattering at the textured GaN surfaces is a major reason for increasing the light extraction efficiency of LEDs.

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