Open Access20-Gbit/s directly modulated photonic crystal nanocavity laser with ultra-low power consumption
Author(s) -
Shinji Matsuo,
Akihiko Shinya,
ChinHui Chen,
Kengo Nozaki,
Tomonari Sato,
Yoshihiro Kawaguchi,
Hideaki Taniyama,
Masaya Notomi
Publication year - 2011
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.19.002242
Subject(s) - materials science , optics , optoelectronics , laser , photonics , photonic crystal , heterojunction , waveguide , semiconductor laser theory , modulation (music) , semiconductor , physics , acoustics
We have demonstrated an ultracompact buried heterostructure photonic crystal (PhC) laser, consisting of an InGaAsP-based active region (5.0 x 0.3 x 0.15 μm3) buried in an InP layer. By employing a buried heterostructure with an InP layer, we can greatly improve thermal resistance and carrier confinement. We therefore achieved a low threshold input power of 6.8 μW and a maximum output power in the output waveguide of -10.3 dBm by optical pumping. The output light is effectively coupled to the output waveguide with a high external differential quantum efficiency of 53%. We observed a clear eye opening for a 20-Gbit/s NRZ signal modulation with an absorbed input power of 175.2 μW, resulting in an energy cost of 8.76 fJ/bit. This is the smallest reported energy cost for any type of semiconductor laser.